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1/16 april 2002 stp10nk60z/fp, stb10nk60z/-1 sth10nk60zfi, stw10nk60z n-channel600v-0.65 w -10ato-220/fp/d 2 pak/i 2 pak/to-247/isowatt218 zener-protected supermesh ? power mosfet n typical r ds (on) = 0.65 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances n very good manufacturing repeatibility description the supermesh ? series is obtained through an extreme optimization of st's well established strip- based powermesh ? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh ? products. applications n high current, high speed switching n ideal for off-line power supplies, adaptors and pfc n lighting ordering information type v dss r ds(on) i d pw stb10nk60z stb10nk60z-1 sth10nk60zfi stp10nk60z stp10nk60zfp stw10nk60z 600 v 600 v 600 v 600 v 600 v 600 v < 0.75 w < 0.75 w < 0.75 w < 0.75 w < 0.75 w < 0.75 w 10 a 10 a 10 a 10 a 10 a 10 a 115 w 115 w 35 w 115 w 35 w 156 w sales type marking package packaging stp10nk60z p10nk60z to-220 tube stp10nk60zfp p10nk60zfp to-220fp tube STB10NK60ZT4 b10nk60z d 2 pak tape & reel stb10nk60z b10nk60z d 2 pak tube (only under request) stb10nk60z-1 b10nk60z i 2 pak tube sth10nk60zfi h10nk60fi isowatt218 tube stw10nk60z w10nk60z to-247 tube to-220 to-220fp 1 2 3 i 2 pak 1 2 3 1 3 d 2 pak 1 2 3 to-247 1 2 3 isowatt218 internal schematic diagram
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 2/16 absolute maximum ratings ( l ) pulse width limi ted by safe operating area (1) i sd 10a, di/dt 200a/ m s, v dd v (br)dss ,t j t jmax. thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device's esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit to-220/ d 2 pak/i 2 pak to-220fp isowatt218 to-247 v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 10 10 (*) 10 (*) 10 a i d drain current (continuos) at t c = 100 c 5.7 5.7 (*) 5.7 (*) 5.7 a i dm ( l ) drain current (pulsed) 36 36 (*) 36 (*) 36 a p tot total dissipation at t c =25 c 115 35 35 156 w derating factor 0.92 0.28 0.28 1.25 w/ c v esd(g-s) gate source esd (hbm-c=100pf, r=1.5k w) 4000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 2000 - v t j t stg operating junction temperature storage temperature -55 to 150 c to-220 i 2 pak d 2 pak to-220fp isowatt 218 to-247 unit rthj-case thermal resistance junction-case max 1.09 3.6 0.8 c/w rthj-pcb thermal resistance junction-pcb max (when mounted on minimum footprint) 60 c/w rthj-amb thermal resistance junction-ambient max 62.5 50 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 300 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v (*) limited only by maximum temperature allowed
3/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi electrical characteristics (tcase =25 c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 20v 10 m a v gs(th) gate threshold voltage v ds =v gs ,i d = 100 m a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.5 a 0.65 0.75 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 4.5 a 7.8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1370 156 37 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 480v 90 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300 v, i d =4a r g = 4.7 w v gs =10v (resistive load see, figure 3) 20 20 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d =8a, v gs = 10v 50 10 25 70 nc nc nc symbol parameter test condition s min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300 v, i d =4a r g =4.7 w v gs =10v (resistive load see, figure 3) 55 30 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d =8a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 18 18 36 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 10 36 a a v sd (1) forward on voltage i sd =10a,v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100a/ m s v dd = 40v, t j = 150 c (see test circuit, figure 5) 570 4.3 15 ns m c a
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 4/16 thermal impedance for to-220fp thermal impedance for to-220/d2pak/i2pak safe operating area for to-220fp thermal impedance for to-247 safe operating area for to-247 safe operating area for to-220/d2pak/i2pak
5/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi safe operating area for isowatt218 output characteristics transconductance thermal impedance for isowatt218 static drain-source on resistance transfer characteristics
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 6/16 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate threshold voltage vs temp. capacitance variations gate charge vs gate-source voltage normalized bvdss vs temperature
7/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi maximum avalanche energy vs temperature
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 8/16 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
9/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 10/16 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 to-220fp mechanical data
11/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.211 0.222 c 3.30 3.80 0.130 0.150 d 2.90 3.10 0.114 0.122 d1 1.88 2.08 0.074 0.082 e 0.75 0.95 0.030 0.037 f 1.05 1.25 0.041 0.049 f2 1.50 1.70 0.059 0.067 f3 1.90 2.10 0.075 0.083 g 10.80 11.20 0.425 0.441 h 15.80 16.20 0.622 0.638 l 9 0.354 l1 20.80 21.20 0.819 0.835 l2 19.10 19.90 0.752 0.783 l3 22.80 23.60 0.898 0.929 l4 40.50 42.50 1.594 1.673 l5 4.85 5.25 0.191 0.207 l6 20.25 20.75 0.797 0.817 n 2.1 2.3 0.083 0.091 r 4.6 0.181 dia 3.5 3.7 0.138 0.146 p025c/a isowatt218 mechanical data - weight : 4.9 g (typ.) - maximum torque (applied to mounting flange) recommended: 0.8 nm; maximum: 1 nm - the side of the dissipator must be flat within 80 m m
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 12/16 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0? 8? d 2 pak mechanical data 3
13/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 14/16 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5? 5? v2 60? 60? dia 3.55 3.65 0.14 0.143 to-247 mechanical data
15/16 stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi tube shipment (no suffix)* tape and reel shipment (suffix ot4o)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp10nk60z/fp, stb10nk60z, stb10nk60z-1, stw10nk60z, sth10nk60zfi 16/16 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

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